Nature | Materials
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Layer-engineered quantum anomalous Hall effect in twisted rhombohedral graphene
Magnetotransport measurements on numerous samples of monolayer–multilayer (1 + N) rhombohedral graphene reveal a high-Chern-number quantum anomalous Hall effect with Chern number C = N. Further, in twisted Bernal bilayer–rhombohedral tetralayer graphene, a displacement-field-driven topological phase transition between C = 3 and C = 4 states is demonstrated.