Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors

Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors | Science

For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used to maximize the amount of charge that can be induced and thereby the ...

https://www.science.org/doi/10.1126/science.adx6955 science.org

RSS Hunter • Jul 10, 2025